Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4801892
Reference21 articles.
1. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
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3. Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistors
4. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
5. Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress
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