Optical properties of α-irradiated and annealed Si-doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365257
Reference22 articles.
1. Frequency Shift with Temperature as Evidence for Donor-Acceptor Pair Recombination in Relatively Puren-Type GaAs
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1. Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2012-09
2. Photoacoustic and photoluminescence studies of H+ion-implanted n-GaAs;physica status solidi (a);2005-02
3. Radiative recombination characteristics in GaAs multilayer n+−i interfaces;Journal of Applied Physics;2001-11-15
4. Electronic and structural properties of the n-GaAs: Si as-grown, α-particle irradiated and annealed;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
5. Symmetry properties of the direct nonparabolic L-excitons in semiconductors of the T2d () space group and vector-coupling coefficients for CdTe;Crystal Engineering;2001-06
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