An insulated‐gate charge transfer device on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91983
Reference5 articles.
1. Inversion layers on InP
2. n-channel inversion-mode InP m.i.s.f.e.t.
3. InP/Al2O3n-channel inversion-mode m.i.s.f.e.t.s using sulphur-diffused source and drain
4. Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.
5. n-channel formation on semi-insulating InP surface by m.i.s.f.e.t.
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