Spin Hall magnetoresistance in antiferromagnetic insulators-Reference-Cited by-同舟云学术

Spin Hall magnetoresistance in antiferromagnetic insulators

Published:2020-06-28 Issue:24 Volume:127 Page:243902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Geprägs Stephan¹^ORCID,Opel Matthias¹^ORCID,Fischer Johanna¹²^ORCID,Gomonay Olena³^ORCID,Schwenke Philipp¹²^ORCID,Althammer Matthias¹²^ORCID,Huebl Hans¹²⁴^ORCID,Gross Rudolf¹²⁴^ORCID

Affiliation:

1. Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany

2. Physik-Department, Technische Universität München, 85748 Garching, Germany

3. Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany

4. Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany

Funder

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

H2020 Future and Emerging Technologies

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009529

Reference66 articles.

1. Room-temperature antiferromagnetic memory resistor

2. Antiferromagnetic spintronics

3. Antiferromagnetic spintronics

4. Writing and reading of an arbitrary optical polarization state in an antiferromagnet

5. Terahertz electrical writing speed in an antiferromagnetic memory

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