Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2193046
Reference31 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
4. Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)
5. High-κ Dielectric Materials for Microelectronics
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