Oscillator strength of excitons in (In, Ga)As/GaAs quantum wells in the presence of a large electric field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369606
Reference26 articles.
1. Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure
2. Ultrafast cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator
3. Reflectance study of the oscillator strength of excitons in semiconductor quantum wells
4. Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells
5. Excitonic properties and resonance widths in biased (Ga,In)As-GaAs double quantum wells
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1. Polarizability of Exciton in Surface Quantum Well;Journal of Physical Science;2019-04-25
2. Suppressing nonradiative recombination in crown-shaped quantum wells;Japanese Journal of Applied Physics;2018-02-06
3. RCEPD With Enhanced Light Absorption by Crown-Shaped Quantum Well;IEEE Photonics Technology Letters;2015-10-01
4. Electro-optical switching between polariton and cavity lasing in an InGaAs quantum well microcavity;Optics Express;2014-12-08
5. Exciton binding energy and excitonic absorption spectra in a parabolic quantum wire under transverse electric field;Physica B: Condensed Matter;2011-12
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