Characteristics of silicon nitride deposited by plasma‐enhanced chemical vapor deposition using a dual frequency radio‐frequency source
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351396
Reference11 articles.
1. Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia Reaction
2. Structure and Sodium Migration in Silicon Nitride Films
3. Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma
4. Physical‐Electrical Properties of Silicon Nitride Deposited by PECVD on III–V Semiconductors
5. Summary Abstract: Relationships between stress, composition, and microstructure in sputtered silicon nitride
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