Incorporation of Zn during epitaxial growth of Y1Ba2Cu3O7−d films by pulsed laser deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116720
Reference17 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Room temperature rectifying characteristics of epitaxial Y1Ba2Cu3−xZnxO7−δ (x=0.0,0.2) and Nb:SrTiO3 (Nb: 0.05%, 0.1%, 0.5%) heterojunctions;Journal of Applied Physics;2006-02-15
2. Electrical properties of epitaxial junctions betweenNb:SrTiO3and optimally doped, underdoped, and Zn-dopedYBa2Cu3O7−δ;Physical Review B;2005-11-22
3. Sharp resonant multiplet in femtosecond optical pair-breaking spectroscopy of optimally doped, underdoped, and Zn-dopedYBa2Cu3O7−δ: Transient insulating regions in the superconducting state;Physical Review B;2002-05-07
4. Incorporation of Co dopant and its effect on magneto-transport properties in c-axis oriented epitaxial YBa2Cu3−xCoxO7−δ thin films;Physica C: Superconductivity;1998-08
5. Annealing studies of Zn and Fe doped epitaxially grown YBCO thin films;Solid State Communications;1998-03
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