Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118465
Reference15 articles.
1. Negative differential resistance through real‐space electron transfer
2. Novel real-space hot-electron transfer devices
3. A novel /spl delta/-doped GaAs/lnGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability
4. High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices
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1. δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition;Thin Solid Films;2007-02
2. Dielectric properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3/polyurethane 0-3 composites;Journal of Materials Science Letters;2002
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