Effects of low temperature preannealing on ion‐implant assisted intermixing of Si1−xGex/Si quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117131
Reference24 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A study of Si1−xGex/Si quantum-well intermixing by photocurrent spectroscopy;Thin Solid Films;2000-01
2. Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels;Applied Physics Letters;1999-03-29
3. Point defect redistribution in Si1-xGex alloys;Journal of Materials Science: Materials in Electronics;1999
4. The Effect of Grown-In Point Defects on Sb Diffusion in MBE-Grown Si and Sige;MRS Proceedings;1999
5. Ion beam induced structural transformations in SimGen superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
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