Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice-Reference-Cited by-同舟云学术

Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice

Published:2014-02-03 Issue:5 Volume:104 Page:053508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Callewaert F.,Hoang A. M.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4864403

Reference19 articles.

1. A new semiconductor superlattice

2. Minority carrier lifetimes in ideal InGaSb/InAs superlattices

3. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices

4. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

5. Passivation of type-II InAs∕GaSb double heterostructure

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