Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering-Reference-Cited by-同舟云学术

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Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Published:2007-01-08 Issue:2 Volume:90 Page:023505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Toh Eng-Huat,Wang Grace Huiqi,Lo Guo-Qiang,Chan Lap,Samudra Ganesh,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2430924

Reference7 articles.

1. Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials;Yeo Y.-C.,2006

2. Analysis and Simulation of Semiconductor Devices

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