Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1494853
Reference17 articles.
1. Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy
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3. Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
4. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
5. Optical investigations of AlGaN on GaN epitaxial films
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