PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2substrates prepared by a modified hot‐wall technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323111
Reference12 articles.
1. Quasi-static growth of PbS epitaxic films
2. Properties of PbS epitaxial films grown by a hot wall method
3. PbSe heteroepitaxy by the hot wall technique
4. High mobility as-growm PbTe films prepared by the hot wall technique
5. Thick Epitaxial Films of Pb1−xSnxTe
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1. Optoelectronics with II–VI and IV–VI compounds;Materials Science and Engineering: B;1991-07
2. Thin-Film Single-Crystal Growth of BiI3by a Hot Wall Technique;Japanese Journal of Applied Physics;1990-04-20
3. Characterization of Pb0.8Sn0.2Te films grown on KCI substrates by hot-wall epitaxy;Journal of Crystal Growth;1989-07
4. Growth and material characterization of PbSnSe/PbSe heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
5. Photoluminescence of CdTe films grown on BaF2 with PbTe buffer layers by hot-wall epitaxy;Thin Solid Films;1989-04
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