Numerical simulations of two-photon absorption time-resolved photoluminescence to extract the bulk lifetime of semiconductors under varying surface recombination velocities
Author:
Affiliation:
1. School of Photovoltaics and Renewable Energy Engineering (SPREE), University of New South Wales, Sydney 2052, Australia
Funder
Australian Renewable Energy Agency
Centre of Excellence for Core to Crust Fluid Systems, Australian Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5037130
Reference29 articles.
1. Measurement of minority-carrier lifetime by time-resolved photoluminescence
2. Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
3. A Method to Separate Bulk Lifetime and Surface Recombination Velocity of Silicon Bricks based on Transient Photoluminescence
4. Separation of the surface and bulk recombination in silicon by means of transient photoluminescence
5. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bulk Lifetime and Doping in Crystalline Silicon via Two-Photon Absorption Time-Resolved Photoluminescence Decay;IEEE Journal of Photovoltaics;2022-05
2. Analytical model of the modulated photoluminescence in semiconductor materials;Journal of Physics D: Applied Physics;2021-12-01
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