Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4792499
Reference27 articles.
1. Electronic properties and phase transitions in low-dimensional semiconductors
2. Bonding and structure of gallium thallium selenide (GaTlSe2)
3. Photoinduced Current Transient Spectroscopy of TlInS2Layered Crystals Doped with Er, B, and Tb Impurities
4. Refractive indices of layered semiconductor ferroelectrics TlInS2, TlGaS2, and TlGaSe2 from ellipsometric measurements limited to only layer-plane surfaces
5. Excitonic and other interband transitions inTlInS2single crystals
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2. A deconvoluted PL approach to probe the charge carrier dynamics of the grain interior and grain boundary of a perovskite film for perovskite solar cell applications;Physical Chemistry Chemical Physics;2017
3. Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 ≤ x ≤ 1) by spectroscopic ellipsometry, transmission, and reflection measurements;Philosophical Magazine;2014-06-09
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