Variable behavior of the current exponent in a microscopic nucleation model for electromigration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370522
Reference8 articles.
1. Electromigration failure mechanisms in bamboo-grained Al(Cu) interconnections
2. Electromigration in Al(Cu) two‐level structures: Effect of Cu and kinetics of damage formation
3. Electromigration in metals
4. Current density dependence of electromigration failure of submicron width, multilayer Al alloy conductors
5. Reliability analysis for encapsulated interconnect lines under dc and pulsed dc current using a continuum electromigration transport model
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1. Very high current density package level electromigration test for copper interconnects;Journal of Applied Physics;2008-05
2. Biased resistor network model for electromigration failure and related phenomena in metallic lines;Physical Review B;2004-11-19
3. Investigation of the role of compositional effects on electromigration damage of metallic interconnects;Computational Materials Science;2001-11
4. A percolative approach to electromigration in metallic lines;Journal of Physics D: Applied Physics;2001-04-18
5. A percolative approach to reliability of thin films;IEEE Transactions on Electron Devices;2000
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