Electronical properties of metal‐insulator‐semiconductor devices prepared on thermally treated InP in phosphorus overpressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337177
Reference9 articles.
1. n-channel inversion-mode InP m.i.s.f.e.t.
2. Evidence for interfacial defects in metal‐insulator‐InP structures induced by the insulator deposition
3. Thermal degradation of InP and its control in LPE growth
4. Prevention of InP surface decomposition in liquid phase epitaxial growth
5. The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions
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1. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer;Nano Letters;2017-09-11
2. Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices;Thin Solid Films;1997-11
3. The interface properties of MIS structures on anodically oxidized GaSb;Semiconductor Science and Technology;1997-09-01
4. Préparation et caractérisation de couches minces d'oxynitrure de phosphore destinées à la passivation d'InP;Journal de Physique III;1996-11
5. Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices;Journal of Applied Physics;1996-09
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