Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124843
Reference20 articles.
1. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
2. Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
3. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy
4. Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er
5. Er doping of GaN during growth by metalorganic molecular beam epitaxy
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1. Temperature induced upconversion behaviour of Ho3+-Yb3+ codoped yttrium oxide films prepared by pulsed laser deposition;Journal of Alloys and Compounds;2016-07
2. Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers;Radiation Effects and Defects in Solids;2012-07
3. First-principles study of electronic structure and magnetism of cubic Al1−xErxN using the LSDA+U approach;Journal of Magnetism and Magnetic Materials;2011-05
4. Electronic structure and magnetism of cubic Ga1−xEuxN and Al1−xEuxN using the LSDA+U approach;Computational Materials Science;2010-06
5. Red up-conversion emission from nanocrystalline GaN powders co-doped with Er3+ and Yb3+;Optical Materials;2009-04
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