Effects of ambients on oxygen precipitation in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91546
Reference9 articles.
1. Dislocation pinning effect of oxygen atoms in silicon
2. Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K
3. Oxygen Content of Silicon Single Crystals
4. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
5. Characterization of structural defects in annealed silicon containing oxygen
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