Structure of HfO2 films epitaxially grown on GaAs (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2356895
Reference14 articles.
1. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
2. Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing
3. Hafnia and hafnia-toughened ceramics
4. Some Properties of Hafnium Oxide, Hafnium Silicate, Calcium Hafnate, and Hafnium Carbide
5. The crystal structure of ZrO2 and HfO2
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1. Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study;Journal of Crystal Growth;2017-11
2. Ultra-high thermal stability and extremely low D on HfO2/p-GaAs(001) interface;Microelectronic Engineering;2017-06
3. Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition;Microelectronic Engineering;2017-06
4. (Invited) High κ/InGaAs for Ultimate CMOS – Interfacial Passivation, Low Ohmic Contacts, and Device Performance;ECS Transactions;2014-03-24
5. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2;Applied Physics Letters;2013-12-16
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