Spectroscopic ellipsometry study of glow‐discharge‐deposited thin films ofa‐Ge:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337582
Reference31 articles.
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3. Hydrogenation and the density of defect states in amorphous silicon
4. High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films
5. In situ ellipsometry studies of the growth of hydrogenated amorphous silicon by glow discharge
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2. Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates;Applied Surface Science;2018-04
3. Parametrized dielectric functions of amorphous GeSn alloys;Journal of Applied Physics;2015-09-28
4. Detection of medium-range-order structure in amorphous germanium films by spectroscopic ellipsometry;Journal of Applied Crystallography;2015-06-16
5. High Quality a-Ge:H Films and Devices Through Enhanced Plasma Chemistry;MRS Proceedings;2007
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