Plasma cleaned Si analyzedinsituby x‐ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351373
Reference25 articles.
1. Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces
2. Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low Temperatures
3. Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces
4. In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen
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