Study of Si/GeSip‐nheterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348884
Reference14 articles.
1. The n-channel SiGe/Si modulation-doped field-effect transistor
2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
3. Heterojunction bipolar transistors using Si-Ge alloys
4. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
5. Interface states in abrupt semiconductor heterojunctions
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