Growth of TiSi2 from codeposited TiSix layers and interfacial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118880
Reference11 articles.
1. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
2. Amorphous Ti‐Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayers
3. Nucleation and growth in the initial stage of metastable titanium disilicide formation
4. Simultaneous occurrence of multiphases in interfacial reactions of ultrahigh vacuum deposited Ti thin films on (111)Si
5. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines
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1. Titanium-based ohmic contacts in advanced CMOS technology;Journal of Physics D: Applied Physics;2019-09-17
2. Property of cobalt nickel silicide by thermal annealing of Co/Ni bilayer on a silicon substrate;Metals and Materials International;2006-04
3. Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films;Thin Solid Films;2004-03
4. Effects of stress on the interfacial reactions of metal thin films on (001)Si;Thin Solid Films;2003-01
5. Transmission electron microscopy investigation of the formation of C54–TiSi2 phase on stressed (001)Si;Micron;2002-01
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