Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868675
Reference19 articles.
1. Internal efficiency analysis of 280-nm light emitting diodes
2. Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
3. GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
4. Nitride-Based Dual-Stage MQW LEDs
5. Enhanced Performance of Nitride-Based Blue LED with Step-stage MQW Structure
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1. Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer;Journal of Applied Physics;2022-03-07
2. Rational Superlattice Electron Blocking Layer Design for Boosting the Quantum Efficiency of 371 nm Ultraviolet Light-Emitting Diodes;IEEE Transactions on Electron Devices;2021-12
3. The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED;Journal of Electronic Materials;2021-10-22
4. Hole Transport in Ultraviolet Light-Emitting Diode via p-Type Injection Channel;IEEE Transactions on Electron Devices;2021-05
5. Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation;IEEE Journal of Quantum Electronics;2018-12
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