Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon-Reference-Cited by-同舟云学术

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Published:2015-02-09 Issue:6 Volume:106 Page:063506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Yanhong¹,Li La¹,Wang Song¹,Gao Ping¹,Zhou Peng²,Li Jinhua³,Weng Zhankun³,Pan Lujun¹,Zhang Jialiang¹

Affiliation:

1. School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, China

2. Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China

3. Center for Nano Metrology and Manufacturing Technologies and International Joint Research Center for Nanophotonics and Biophotonics, Changchun University of Science and Technology, Changchun 130022, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908540

Reference27 articles.

1. 19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices