Ti and V layers retard interaction between Al films and polycrystalline Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88734
Reference5 articles.
1. Interaction of Al layers with polycrystalline Si
2. Characteristics of aluminum‐titanium electrical contacts on silicon
3. Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
4. Formation of vanadium silicides by the interactions of V with bare and oxidized Si wafers
5. Kinetics of silicide formation by thin films of V on Si and SiO2 substrates
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