X-ray analysis of spontaneous lateral modulation in (InAs)n/(AlAs)m short-period superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338499
Reference5 articles.
1. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process
2. Effect of surface steps on the microstructure of lateral composition modulation
3. Effect of surface steps on the microstructure of lateral composition modulation
4. Characterizing composition modulations in InAs/AlAs short-period superlattices
5. Stress from a parallelepipedic thermal inclusion in a semispace
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1. Self-Powered Device Using Aligned Carbon Nanotube Arrays in Multi-Physics Fields;Advanced Materials Research;2011-07
2. Spontaneous lateral modulation in short-period superlattices investigated by grazing-incidence x-ray diffraction;Physical Review B;2005-07-08
3. X-ray diffraction on laterally modulated (InAs)n∕(AlAs)m short-period superlattices;Journal of Applied Physics;2004-11
4. Structural properties of self-organized semiconductor nanostructures;Reviews of Modern Physics;2004-09-28
5. Non-coplanar reciprocal space mapping of In0.2Ga0.8As/GaAs multilayer: modelling of the composition and strain distribution;Journal of Physics D: Applied Physics;2003-04-29
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