Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition-Reference-Cited by-同舟云学术

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Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

Published:2015-12-07 Issue:23 Volume:107 Page:232103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuznetsov Vladimir L.¹,Vai Alex T.¹^ORCID,Al-Mamouri Malek²^ORCID,Stuart Abell J.²,Pepper Michael³,Edwards Peter P.¹

Affiliation:

1. Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, United Kingdom

2. Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT, United Kingdom

3. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936613

Reference36 articles.

1. Handbook of Transparent Conductors

3. New n-Type Transparent Conducting Oxides

4. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes

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