On the rearrangement and dissociation mechanism of SiH4+ in its triply-degenerate ground state

Abstract

An ab initio molecular orbital study has been performed to explore the structural rearrangement and dissociation of SiH4+ radical cation at the X̃2T2 ground electronic state. All stationary points located on the lowest adiabatic sheet of Jahn–Teller (JT) split X̃2T2 state are fully optimized and characterized by performing harmonic vibrational frequency calculations. The structural rearrangement is predicted to start with JT distortions involving the doubly-degenerate (e) and triply-degenerate (t2) modes. The e mode reduces the initial Td symmetry of the SiH4+ ground state to a D2d saddle point, which eventually dissociates into the SiH3+(2A1) + H products via C3v local minimum. In turn, an e-type bending of αH-Si-H yields the SiH2+(2A1) + H2 products through the first C3v local minimum and then the Cs(2A′) global minimum. In the alternative pathway, the t2 mode distorts the initial Td symmetry into a loosely bound C3v local minimum, which further dissociates into the SiH3+(2A1) + H asymptote via totally symmetric Si–H stretching mode, and SiH2+(2A1) + H2 products via H–Si–H bending (e) mode through the Cs(2A′) global minimum. It is further predicted that the Cs global minimum interconverts equivalent structures via a C2v transition structure. In addition, the two dissociation products are found to be connected by a second C2v transition structure.