Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio
Author:
Affiliation:
1. Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
Funder
Defense Advanced Research Projects Agency
Semiconductor Research Corporation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0075166
Reference15 articles.
1. Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment
2. M. Si , Z. Lin , Z. Chen , and P. D. Ye , in Symposium on VLSI Technology ( VLSI, 2021), pp. T2–T4.
3. Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment
4. (Invited) Roles of Hydrogen in Amorphous Oxide Semiconductor
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