Investigation of phonon lifetimes and magnon–phonon coupling in YIG/GGG hybrid magnonic systems in the diffraction limited regime

Author:

Settipalli Manoj1ORCID,Zhang Xufeng2,Neogi Sanghamitra1ORCID

Affiliation:

1. Ann and H.J. Smead Aerospace Engineering Sciences, University of Colorado Boulder 1 , Boulder, Colorado 80303, USA

2. Electrical and Computer Engineering, Northeastern University 2 , Boston, Massachusetts 02115, USA

Abstract

Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are attractive candidates for quantum memories because of their long lifetimes and high operating frequencies. In this study, we establish a modeling approach to design hybrid magnonic high-overtone bulk acoustic wave resonator (HBAR) structures for high-density, long-lasting quantum memories, and efficient quantum transduction devices. We illustrate the approach by investigating a hybrid magnonic system, consisting of a gadolinium iron garnet (GGG) thick film and a patterned yttrium iron garnet (YIG) thin film. The BAW phonons are excited in GGG thick film via coupling with magnons in the YIG thin film. We present theoretical and numerical analyses of the diffraction-limited BAW phonon lifetimes, modeshapes, and magnon–phonon coupling strengths in YIG/GGG planar and confocal HBAR (CHBAR) structures. We utilize Fourier beam propagation and Hankel transform eigenvalue problem methods and compare the two methods. We discuss strategies to improve the phonon lifetimes in the diffraction-limited regime, since increased lifetimes have direct implications on the storage times of quantum states for quantum memory applications. We find that ultra-high cooperativities and phonon lifetimes on the order of ∼105 and ∼10 milliseconds, respectively, could be achieved using a CHBAR structure with 10μm YIG lateral area. Additionally, high integration density of on-chip memory or transduction centers is naturally desired for high-density memory or transduction devices. The proposed CHBAR structure will offer more than 100-fold improvement of integration density relative to a recently demonstrated YIG/GGG device. Our results will have direct applicability for devices operating in the cryogenic or milliKelvin regimes. For example, our study will inform the design of HBAR devices that could couple with superconducting qubits for promising quantum information platforms.

Funder

University of Colorado Boulder

JILA, University of Colorado

National Institute of Standards and Technology

Publisher

AIP Publishing

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