High‐power‐density single‐mode operation of GaAs‐GaAlAs TJS lasers utilizing Si3N4plasma deposition for facet coating
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326281
Reference12 articles.
1. Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years
2. GaAs lasers with consistently low degradation rates at room temperature
3. Long‐term degradation of GaAs‐Ga1−xAlxAs DH lasers due to facet erosion
4. Degradation of (AlGa)As DH lasers due to facet oxidation
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1. Highly uniform operation of high-performance 1.3-/spl mu/m AlGaInAs-InP monolithic laser arrays;IEEE Journal of Quantum Electronics;2000-05
2. Blue light generation by resonator‐enhanced frequency doubling of an extended‐cavity diode laser;Applied Physics Letters;1994-08
3. Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation;Japanese Journal of Applied Physics;1994-07-15
4. Generation of 425‐nm light by waveguide frequency doubling of a GaAlAs laser diode in an extended‐cavity configuration;Applied Physics Letters;1993-12-06
5. Optical sources for pulse‐position‐modulation systems;Review of Scientific Instruments;1992-01
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