Hopping nature of the Hall effect in a samarium nickelate film-Reference-Cited by-同舟云学术

Hopping nature of the Hall effect in a samarium nickelate film

Published:2024-03-04 Issue:10 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Stupakov Alexandr¹^ORCID,Kocourek Tomáš¹^ORCID,Pacherová Oliva¹^ORCID,Suchaneck Gunnar²^ORCID,Dejneka Alexandr¹^ORCID,Tyunina Marina¹³^ORCID

Affiliation:

1. Institute of Physics of the Czech Academy of Sciences 1 , Na Slovance 2, 18200 Prague, Czech Republic

2. Institute of Solid State Electronics, Technical University of Dresden 2 , Mommsenstraße 15, 01062 Dresden, Germany

3. Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu 3 , P.O. Box 4500, FI-90014 Oulu, Finland

Abstract

We analyzed the temperature dependencies of the DC resistivity and Hall coefficient in thin films of samarium nickelate SmNiO3. A dominating hopping conductivity was revealed in the insulating phase below 400 K, which defines an exponential drop in the Hall coefficient with temperature. The estimated dependencies of the hopping activation energy, Hall mobility, and charge carrier density suggest that small polarons are responsible for hopping. The hopping transport explains the observed sign anomaly of the Hall coefficient in rare-earth nickelates.

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0198307/19706051/102103_1_5.0198307.pdf

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