Defect profiling in FEFET Si:HfO2 layers-Reference-Cited by-同舟云学术

Defect profiling in FEFET Si:HfO2 layers

Published:2020-11-16 Issue:20 Volume:117 Page:203504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

O'Sullivan B. J.¹^ORCID,Putcha V.¹^ORCID,Izmailov R.²^ORCID,Afanas'ev V.²,Simoen E.¹^ORCID,Jung T.¹³,Higashi Y.¹⁴^ORCID,Degraeve R.¹,Truijen B.¹,Kaczer B.¹^ORCID,Ronchi N.¹,McMitchell S.¹^ORCID,Banerjee K.¹,Clima S.¹^ORCID,Breuil L.¹,Van den Bosch G.¹,Linten D.¹,Van Houdt J.¹²^ORCID

Affiliation:

1. imec, 3001 Leuven, Belgium

2. Department of Electrical Engineering, Katholieke Universiteit Leuven, 3001 Leuven, Belgium

3. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, South Korea

4. Institute of Memory Technology R&D, Kioxia Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi 212-8582, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0029072

Reference13 articles.

1. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

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