Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries-Reference-Cited by-同舟云学术

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Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

Published:2019-02-25 Issue:8 Volume:114 Page:082104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohmagari Shinya¹,Yamada Hideaki¹,Tsubouchi Nobuteru¹,Umezawa Hitoshi¹,Chayahara Akiyoshi¹,Seki Akinori²,Kawaii Fumiaki²,Saitoh Hiroaki²,Mokuno Yoshiaki¹

Affiliation:

1. Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

2. Toyota Motor Corporation, 1 Toyota-cho Toyota City, Aichi 471-0826, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5085364

Reference24 articles.

1. High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance

2. Concepts for diamond electronics

3. Single crystal diamond wafers for high power electronics

4. Extreme dielectric strength in boron doped homoepitaxial diamond

5. Power high-voltage and fast response Schottky barrier diamond diodes

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1. The quality of epitaxial lateral overgrown diamond on substrate with laser-cut holes of varying shapes and side orientations;Diamond and Related Materials;2024-10

2. Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance;Diamond and Related Materials;2024-08

3. One-dimensional diamond nanostructures: Fabrication, properties and applications;Carbon;2024-04

4. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

5. Controlled boron content in lightly B-doped single crystal diamond films by variation of methane concentration;Carbon;2024-03

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