Low-threshold terahertz Si:As laser-Reference-Cited by-同舟云学术

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Low-threshold terahertz Si:As laser

Published:2007-04-02 Issue:14 Volume:90 Page:141109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pavlov S. G.,Böttger U.,Hübers H.-W.,Zhukavin R. Kh.,Kovalevsky K. A.,Tsyplenkov V. V.,Shastin V. N.,Abrosimov N. V.,Riemann H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2720271

Reference16 articles.

1. Terahertz lasers based on germanium and silicon

2. An all-silicon Raman laser

3. Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

4. Electroluminescence at 7 terahertz from phosphorus donors in silicon

5. Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon;Quantum Electronics;2015-02-27

2. Shallow-donor lasers in uniaxially stressed silicon;Semiconductors;2013-02

3. The physical principles of terahertz silicon lasers based on intracenter transitions;physica status solidi (b);2012-12-17

4. Spin-orbit coupling effect on bismuth donor lasing in stressed silicon;Applied Physics Letters;2011-10-24

5. Quantum computation with doped silicon cavities;Physical Review B;2010-02-18

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