Calculation of theoretical capacitance–voltage characteristics of 6H–SiC metal–oxide–semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373676
Reference14 articles.
1. Charge trapping in dry and wet oxides on N‐type 6H–SiC studied by Fowler–Nordheim charge injection
2. Characterization of annealed oxides on n-type 6HSiC by high- and low-frequency CV-measurements
3. Effects of Ar and H2 annealing on the electrical properties of oxides on 6H SiC
4. Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors
5. SiC MOS interface characteristics
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2. Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing;Journal of The Electrochemical Society;2011
3. Observation of inversion behaviors induced by polarization effects in GaN∕AlxGa1−xN∕GaN based metal-insulator-semiconductor structures;Applied Physics Letters;2006-06-12
4. A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface;Microelectronic Engineering;2006-03
5. Investigation of hexagonal microtube ZnO on silicon by capacitance-voltage measurements;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-03
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