Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films-Reference-Cited by-同舟云学术

Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films

Published:1996-07-15 Issue:2 Volume:80 Page:962-968
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Tassis D. H.¹,Mitsas C. L.¹,Zorba T. T.¹,Dimitriadis C. A.¹,Valassiades O.¹,Siapkas D. I.¹,Angelakeris M.¹,Poulopoulos P.¹,Flevaris N. K.¹,Kiriakidis G.²

Affiliation:

1. Department of Physics, University of Thessaloniki, 540 06 Thessaloniki, Greece

2. Department of Physics, University of Crete, Heraklion, Greece

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference30 articles.

1. M. A. Nicolet and S. S. Lans, in VLSI Electronics-Microstructure Science, edited by N. G. Einspruch and G. B. Larraben (Academic, New York, 1983), Vol. 6.

2. M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2969 (1985).JAPIAU0021-8979

3. M. C. Bost and J. E. Mahan, J. Appl. Phys. 64, 2034 (1988).JAPIAU0021-8979

4. C. A. Dimitriadis, J. H. Werner, S. Logothetidis, M. Stutzmann, J. Weber, and R. Nesper, J. Appl. Phys. 68, 1726 (1990).JAPIAU0021-8979

5. O. Valassiades, C. A. Dimitriadis, and J. H. Werner, J. Appl. Phys. 70, 890 (1991).JAPIAU0021-8979

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical analysis of FeSi2 based solar cell with PEDOT:PSS hole transport layer;Materials Today Communications;2023-03

2. Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111);Applied Physics Express;2021-01-27

3. Near-infrared lateral photovoltaic effect of β-FeSi2 films on SrTiO3 substrate;Optics Express;2019-05-28

4. Photoluminescence of Mg2Si films fabricated by magnetron sputtering;Applied Surface Science;2017-05

5. Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction;Materials Science and Engineering: B;2015-10