Ion beam etching of GaAs: Influence of etching parameters on the degree of radiation damage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118841
Reference19 articles.
1. Linear polarization of photoluminescence emission and absorption in quantum-well wire structures: Experiment and theory
2. Optical properties ofGa0.8In0.2As/GaAs surface quantum wells
3. Formation of Highly Mobile Defects in GaAs Under Ar-Plasma Etching
4. Surface Damage of Reactive Ion Beam Etched GaAs
5. Effect of ion sputtering on interface chemistry and electrical properties of Au GaAs(100) Schottky contacts
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