An analytic approximation with a wide range of applicability for electron initiated Auger transitions in narrow-gap semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Auger recombination in direct-gap semiconductors: band-structure effects
2. A numerical analysis of Auger processes inp‐type GaAs
3. Auger transitions in semiconductors and their computation
4. Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors
5. Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP
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