Indium‐Hg vacancy interactions in Hg1−xCdxTe measured by perturbed angular correlation-Reference-Cited by-同舟云学术

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Indium‐Hg vacancy interactions in Hg1−xCdxTe measured by perturbed angular correlation

Published:1991-08-19 Issue:8 Volume:59 Page:938-940
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hughes W. C.,Swanson M. L.,Austin J. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106307

Reference12 articles.

1. Effects of annealing on the electrical properties of CdxHg1−xTe

2. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te

3. Indium ion implantation in Hg0.78Cd0.22Te/CdTe

4. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: II . Defect Structure of Indium‐Doped

5. Perturbed angular correlation studies of dopant atom interactions in silicon

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The electron mobility in Hg1-xCdxTe (x = 0.22 and 0.3): A comparison between experimental and theoretical results;Materials Research Bulletin;2021-08

2. Impurities and Defects;Device Physics of Narrow Gap Semiconductors;2009-08-28

3. Equilibrium properties of indium and iodine in LWIR HgCdTe;Journal of Electronic Materials;2000-06

4. Perturbed-angular-correlation studies of In-vacancy pairs in Hg1−xCdxTe;Journal of Applied Physics;1999-10

5. Defect modeling studies in HgCdTe and CdTe;Journal of Electronic Materials;1995-09

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