Photoluminescence and electron subband population in modulation doped AlGaAs/GaAs/AlGaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366416
Reference7 articles.
1. Spectrum and polarization of hot-electron photoluminescence in semiconductors
2. Electron mobility and subband population tuning by a phonon wall inserted in a semiconductor quantum well
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5. Microscopic calculation of the electron-phonon interaction in quantum wells
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1. Effects of confinement on the electron–phonon interaction in Al0.18Ga0.82As/GaAs quantum wells;Journal of Physics: Condensed Matter;2009-03-17
2. Electron-phonon interaction in 2D heterostructures;SPIE Proceedings;2004-05-28
3. Physical processes and lasing properties of GaAs/(Al,Ga)As quantum-cascade structures and lasers;SPIE Proceedings;2004-05-11
4. Subband population and current instabilities in GaAs/(Al,Ga)As quantum-cascade structures;Physica E: Low-dimensional Systems and Nanostructures;2004-03
5. Electric-field-dependent subband population in undoped GaAs/(Al,Ga)As quantum-cascade structures;Semiconductor Science and Technology;2004-01-13
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