Thermally stable ohmic contacts ton‐type GaAs. VI. InW contact metal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344955
Reference26 articles.
1. The role of compound formation and heteroepitaxy in indium‐based ohmic contacts to GaAs
2. Heat treatment effects on an In‐GaAs ohmic contact
3. Contact Resistances of Several Metals and Alloys to GaAs
4. Effect of Nonuniform Conductivity on the Behavior of Gunn Effect Samples
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1. Development of Electrode Materials for Semiconductor Devices;Materials Science Forum;2005-01
2. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01
3. Ohmic Contacts for Compound Semiconductors;Critical Reviews in Solid State and Materials Sciences;1998-03
4. A survey of ohmic contacts to III-V compound semiconductors;Thin Solid Films;1997-10
5. InxGa1 − xAs-based Ohmic contacts to n-type GaAs with W-nitride barrier prepared by radio frequency sputtering;Applied Surface Science;1997-06
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