Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
2. Vuereal InC., 440 Phillip Street, Unit 100, Waterloo, Ontario N2L 5R9, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Canada Foundation for Innovation
Ontario Centres of Excellence
Waterloo Institute for Nanotechnology, University of Waterloo
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0033703
Reference22 articles.
1. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
2. Mini-LED, Micro-LED and OLED displays: present status and future perspectives
3. From Large-Size to Micro-LEDs: Scaling Trends Revealed by Modeling
4. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
5. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application
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