Analysis of (110) indium arsenide–gallium antimonide superlattices for infrared detection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference58 articles.
1. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
2. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
3. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
4. 256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices
5. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
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2. Interband Tunneling in a Type-II Broken-Gap Superlattice;Physical Review Applied;2023-02-22
3. First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN)n superlattices;Revista Mexicana de Física;2021-01-07
4. Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces;Thin Solid Films;2015-08
5. On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses;Thin Solid Films;2013-12
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