Transient thermal analysis of semiconductor diode lasers under pulsed operation
Author:
Affiliation:
1. Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
Funder
German excellence cluster"Nano-initiative Munich"
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference31 articles.
1. Temperature dependence of emission efficiency and lasing threshold in laser diodes
2. Interband cascade lasers with AlGaAsSb bulk cladding layers
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4. Simultaneous measurement of the electronic and lattice temperatures in GaAs/Al0.45Ga0.55As quantum-cascade lasers: Influence on the optical performance
5. Thermal characteristics of GaAs laser junctions under high power pulsed conditions
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