Donor‐levels analysis in GaAlAs double heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90599
Reference10 articles.
1. Defect structure of degraded GaAlAs-GaAs double heterojunction lasers
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3. Te and Ge — doping studies in Ga1−xAlxAs
4. Long‐lifetime photoconductivity effect inn‐type GaAlAs
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1. Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
2. Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
3. Study of photoconductivity in AlxGa1−xAs/GaAs modulation‐doped heterostructures;Journal of Applied Physics;1996-04
4. Low‐temperature decay of photocapacitance caused by Sn‐relatedDXcenters in AlxGa1−xAs;Applied Physics Letters;1993-03-22
5. Energy splitting of the EL2 level in Si‐implanted GaAs/GaAs by field‐effect deep‐level transient spectroscopy;Journal of Applied Physics;1993-02
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