Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767367
Reference11 articles.
1. Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement
2. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
3. 10-W/mm AlGaN-GaN HFET with a field modulating plate
4. Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures
5. Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses
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1. Deep-level defects in homoepitaxial p-type GaN;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-03
2. Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy;Superlattices and Microstructures;2017-12
3. Vertical-Type Blue Light Emitting Diode by Mixed-Source Hydride Vapor Phase Epitaxy Method;physica status solidi (a);2017-11-14
4. Generation of electrical damage in n-GaN films following treatment in a CF4plasma;Applied Physics Express;2017-10-13
5. A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures;Journal of Applied Physics;2017-07-21
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